Accession Number:

AD1079943

Title:

Design Comparison of Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) for Linear-Mode Operation

Descriptive Note:

Technical Report,01 Jan 2018,31 Dec 2018

Corporate Author:

CCDC Army Research Laboratory Adelphi United States

Personal Author(s):

• O'Brien,Heather
• Urciuoli,Damian
• Ogunniyi,Aderinto
• Hull,Brett

Report Date:

2019-08-01

Pagination or Media Count:

18.0

Abstract:

Silicon carbide metal-oxide semiconductor field-effect transistors MOSFETs were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 x 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as channel length, gate oxide thickness, and implantation process, were varied to study the effects on operation in the saturation region. The MOSFETs were evaluated in a pulse circuit at pulse widths ranging from 250 microsecond to 40 ms. The MOSFETs with the thicker oxide 625 A sustained greater pulsed energy dissipation over 130 Jcm2 than those with thinner oxide. Results suggest that linear-mode silicon carbide MOSFETs with thick oxide can dissipate five times greater pulsed energy density than their commercial silicon counterparts.

Descriptors:

• silicon carbide
• metal oxide semiconductors
• field effect transistors
• capacitors
• thermal instability
• semiconductor devices
• metal oxides
• compound semiconductors
• ceramic materials

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE