Accession Number:

AD1079428

Title:

Digital Logic Gate Characterization with Gallium Nitride Transistor

Descriptive Note:

[Technical Report, Master's Thesis]

Corporate Author:

The Ohio State University

Personal Author(s):

• Heaton, Timothy

Report Date:

2019-08-01

Pagination or Media Count:

66

Abstract:

This thesis presents work on the development of digital logic gates using Gallium Nitride GaN transistors in a 0.25 m process. The allowed minimum width of 12 m is reduced to 5 m in order to observe scalability and to measure the performance benets of smaller device sizes in the GaN process. Due to poor modeling, the designed Buffered FET Logic INV, NOR2, and NAND2 are designed for functionality over performance, resulting from the risk of failure without proper simulations. A preliminary test plan was developed and executed to prove the functionality of the devices across varying temperatures, voltages, and input frequencies, with initial tests indicating that the devices are fully functional across these parameters.

Descriptors:

• logic gates
• compound semiconductors
• semiconductors
• frequency
• gallium nitrides
• transistors
• circuits
• energy bands
• logic
• simulations
• band gaps
• gallium
• crystal lattices
• electrical engineering
• high electron mobility transistors
• integrated circuits
• materials
• nand gates
• nitrides
• power supplies

Subject Categories:

• Computer Hardware

Distribution Statement:

[A, Approved For Public Release]