Displacement Damage Effects in GeSn Light Emitting Diodes
AIR FORCE INSTITUTE OF TECHNOLOGY WRIGHT-PATTERSON AFB OH WRIGHT-PATTERSON AFB United States
Pagination or Media Count:
Potential future use on Earth-orbiting satellites calls for investigation into the suitability of GeSn based photonic devices in high energy proton environments. The electroluminescence EL intensity of Ge1-xSnx x 0, 0.02, 0.069, and 0.094 light emitting diodes was measured before and after irradiation by 2 MeV protons at relatively high fluence levels. The results showed that GeSn devices with higher Sn content were up to 10 times more resistant against proton displacement damage than the pure Ge x 0 devices. As Sn concentration increased, the band gap decreased, and V-P hole trap energy level moved further from the mid-gap level, resulting in less EL degradation via Shockley-Read-Hall SRH process.
- Electrooptical and Optoelectronic Devices