Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy (Phase II: GaSb VS InSB QDs)
Technical Report,19 Sep 2016,18 Sep 2018
CHULALONGKORN UNIVERSITY BANGKOK, Thailand
Pagination or Media Count:
Six publications resulted from your AOARD supported project. Following the research work on InAs quantum dots QDs and quantum dot molecules QDMs grown by molecular beam epitaxyMBE, the research target is extended to GaSb QDs and InSb QDs on different substrates, i.e. GaAsGaSbInAs and Ge giving either type II or type III quantum nanostructures. This type II nanostructures would have a unique property of separated carrier confinement for novel nanoelectronic devices such as IR detectors, solar cells, memory devices, etc., and type III with tunneling effect for fast nanoelectronic devices. In phase II of the project, various physical, electrical and optical properties of these two nanostructures, i.e. GaSb and InSb, are intensively studied. The experiment is also extended to magnetic property of InSb nanostructure due to high-g factor.