Accession Number:
AD1071255
Title:
Electron Drift Mobility of Degenerate Semiconductors due to Ionized Impurity Scattering - Phase 3
Descriptive Note:
Technical Report,07 Nov 2018,14 Feb 2019
Corporate Author:
Pendragon Corporation Sunny Isles Beach United States
Personal Author(s):
Report Date:
2019-04-25
Pagination or Media Count:
25.0
Abstract:
Analysis of electron drift mobility of degenerate semiconductors due to ionized impurities and electron drift mobility of degenerately doped zinc oxide ZnO.
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment