Accession Number:

AD1071255

Title:

Electron Drift Mobility of Degenerate Semiconductors due to Ionized Impurity Scattering - Phase 3

Descriptive Note:

Technical Report,07 Nov 2018,14 Feb 2019

Corporate Author:

Pendragon Corporation Sunny Isles Beach United States

Personal Author(s):

• Rode,Daniel

Report Date:

2019-04-25

Pagination or Media Count:

25.0

Abstract:

Analysis of electron drift mobility of degenerate semiconductors due to ionized impurities and electron drift mobility of degenerately doped zinc oxide ZnO.

Descriptors:

• semiconductors
• scattering
• conduction bands
• hall effect
• fortran

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE