Electron Drift Mobility of Degenerate Semiconductors due to Ionized Impurity Scattering - Phase 3
Technical Report,07 Nov 2018,14 Feb 2019
Pendragon Corporation Sunny Isles Beach United States
Pagination or Media Count:
Analysis of electron drift mobility of degenerate semiconductors due to ionized impurities and electron drift mobility of degenerately doped zinc oxide ZnO.
- Electrical and Electronic Equipment