Electron Drift Mobility of Degenerate Semiconductors Due to Ionized Impurity Scattering-Phase 2
Technical Report,06 Sep 2018,26 Oct 2018
Pendragon Corporation Sunny Isles Beach United States
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Analysis of electron mobility due to ionized impurity scattering for degenerate semiconductors and verification of electron mobility equations. In the initial phase of this work, a recently developed theory of electron transport for heavily doped, degenerate semiconductors was introduced. Since there is no previously existing equivalent theory with which to make comparisons in order to verify the accuracy of the new formulation, it is imperative to identify whatever other methods can be found by which such comparisons and verifications can be made. Thus, the major objective of this work is to verify the accuracy of the newly developed analytical expressions for the electron mobility of degenerate semiconductors dominated by ionized impurities, including non-parabolic conduction bands and wave function admixtures. Three methods are to be used i ensure exact agreement with prior theory in the asymptotic limit of parabolic conduction bands, ii numerical integration by quadrature of formulas and comparison to results from exact analytical expressions, and, iii comparisons of computed numerical results using various formulas.
- Electrical and Electronic Equipment
- Solid State Physics