Accession Number:

AD1071253

Title:

Electron Drift Mobility of Degenerate Semiconductors Due to Ionized Impurity Scattering-Phase 1

Descriptive Note:

Technical Report,06 Sep 2018,26 Oct 2018

Corporate Author:

Pendragon Corporation Sunny Isles Beach United States

Personal Author(s):

Report Date:

2019-04-01

Pagination or Media Count:

20.0

Abstract:

Study of the electron drift mobility of degenerate semiconductors due to ionized impurity scattering and the electron drift mobility of degenerately doped zinc oxide ZnO. The objectives for Phase I was to derive analytical expressions for the electron mobility of degenerate semiconductors dominated by ionized impurities, including non-parabolic conduction bands, wave function admixture, Rode-Cetnar screening, impurity compensation, and multiply ionized impurities. Also to compare calculated numerical results to results for classical parabolic bands and Thomas-Fermi screening.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE