Electron Drift Mobility of Degenerate Semiconductors Due to Ionized Impurity Scattering-Phase 1
Technical Report,06 Sep 2018,26 Oct 2018
Pendragon Corporation Sunny Isles Beach United States
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Study of the electron drift mobility of degenerate semiconductors due to ionized impurity scattering and the electron drift mobility of degenerately doped zinc oxide ZnO. The objectives for Phase I was to derive analytical expressions for the electron mobility of degenerate semiconductors dominated by ionized impurities, including non-parabolic conduction bands, wave function admixture, Rode-Cetnar screening, impurity compensation, and multiply ionized impurities. Also to compare calculated numerical results to results for classical parabolic bands and Thomas-Fermi screening.
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