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Stretchable AlGaN/GaN High Electron Mobility Transistors

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Technical Report

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US Army Combat Capabilities Development Command Army Research Laboratory Adelphi United States

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Creating electronics able to stretch to conform to soft, highly deformable surfaces such as skin or clothing has opened up new application areas ranging from medical diagnostics and therapy to soft robotics. The wide, direct band gap gallium nitride GaN makes it a promising material for the high-power, high-frequency electronic devices necessary for efficiently conditioning wirelessly coupled power in stretchable systems. Since most stretchable electronics are intended to interact with soft biological tissue such as human skin, efficiency, reduction of resistive losses and resulting heat generation become particularly important. Since human skin can stretch up to 100 percent in certain parts of the body, creating truly stretchable GaN devices becomes necessary for wearable systems. In this work we propose fabricating the first stretchable GaN high electron mobility transistor HEMT by fabricating transistors in specialized wavy patterns that are known to reduce the peak mechanical stress during stretching in other material systems.

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  • Electrical and Electronic Equipment

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