Accession Number:

AD1067059

Title:

Thermal Evaluation of Isolated Gate Driver for Bidirectional Power Inverter

Descriptive Note:

Technical Report,01 Sep 2018,31 Oct 2018

Corporate Author:

US Army Research Laboratory Aberdeen Proving Ground United States

Personal Author(s):

Report Date:

2019-01-29

Pagination or Media Count:

29.0

Abstract:

This work reports on the steps taken to evaluate a commercially available, half-bridge gate-driver board that is considered as a possible subcomponent of a 60-kW class inverter. Initial results validate the boards operation at the expected frequency while switching a silicon-carbide SiC, half-bridge, metal-oxide-semiconductor field-effect transistor MOSFET module at elevated voltage and current levels with a simulated load. The board was successfully tested at 100 kHz, at room temperature, while driving a 1.7-kV, 8.0-m, SiC module in a half-bridge circuit under various loading conditions. For a supply voltage of 600 V and a load of 25 , for example, the maximum temperature recorded on the board was 55.2 C with a T of 33.9 C. The preliminary thermal tests presented here, although not conclusive, suggest the gate-driver board can be used for the intended application without any modifications to the onboard components and without the need of additional cooling hardware.

Subject Categories:

  • Electric Power Production and Distribution

Distribution Statement:

APPROVED FOR PUBLIC RELEASE