Accession Number:

AD1067044

Title:

Band-Anticrossed Low-Noise Avalanche Photodiode Materials

Descriptive Note:

Technical Report,01 Sep 2010,31 Jan 2017

Corporate Author:

University of Texas at Austin Austin United States

Personal Author(s):

Report Date:

2018-11-11

Pagination or Media Count:

12.0

Abstract:

The major goal of this effort was to significantly increase the multiplication levels and extended spectral response from InAs-based avalanche photodiodes APD, as well as a superior understanding of the fundamental material properties that give rise to low-noise multiplication. The major goal of the Add-On to the program was to unambiguously demonstrate the staircase APD operation using the AlInAsSb alloy system. Please see the attached PDF for more details.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE