Band-Anticrossed Low-Noise Avalanche Photodiode Materials
Technical Report,01 Sep 2010,31 Jan 2017
University of Texas at Austin Austin United States
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The major goal of this effort was to significantly increase the multiplication levels and extended spectral response from InAs-based avalanche photodiodes APD, as well as a superior understanding of the fundamental material properties that give rise to low-noise multiplication. The major goal of the Add-On to the program was to unambiguously demonstrate the staircase APD operation using the AlInAsSb alloy system. Please see the attached PDF for more details.
- Electrical and Electronic Equipment