Understanding Mechanisms of Radiation Degradation in Electronic and Optoelectronic Devices: A Multi-timescale Model
Technical Report,17 Oct 2016,17 Oct 2018
University of Michigan Ann Arbor United States
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The purpose of this funding is to support the development of a theory to describe effects of radiation-induced defects in electronic and optoelectronic devices. No actual experiments will be performed on this effort. This project will continue a research effort at the University of Michigan to simulate atomistic, and meso-scale behavior of defect evolutions in compound semiconductors, including ultrafast displacement cascade, intermediate defect stabilization and cluster formation,as well as slow defect reaction and migration. Based on atomic-level simulations, non-ionization energy loss has been determined.
- Electrical and Electronic Equipment
- Electrooptical and Optoelectronic Devices