Advanced Optical and Electrical Characterization System for SiGeSn Materials and Devices
Technical Report,15 Aug 2015,14 Aug 2016
University of Arkansas Fayetteville United States
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The requested funds from ARO will be used to build an advanced photoluminescence PL and electroluminescence EL measurement system to allow for systemic characterizations of GeSn and SiGeSn material and optoelectronic devices. For PL measurement, with the high pumping power, low temperature operation down to 10 K, and long wavelength emission detectability covering 2-5 micrometer, advanced material optical properties such as carrier lifetime and band alignment could be studied, which provides essential guidance for material growth and device design. The high power continuous wave pumping will provide an easy way to study the GeSn micro-disk laser mode behavior. For EL, the objective is to use the system to conduct temperature-dependent study of light-emitting devices, such as light-emitting diodes LEDs and laser diodes LDs particularly under high injection using the proposed the high power pulsed current source. This will lead to the demonstration of the first electrically injected GeSn based laser. With the new mid-IR detector compatible to both PL and EL measurement, the light detection range will be extended to 3-5 m range to meet the need of material and device characterization when Sn incorporation into Ge is increased with a bandgap narrower than 0.4 eV. The system will be used to support ongoing DARPAARO,AFOSR, and Air Force SBIR projects to develop SiGeSn high performance optoelectronics devices on Si substrates such as emitters and detectors. Other than Group IV photonics, the systems will also serve as a general purpose user facility in PIs group to support other research efforts, for example, the ongoing GaAsBi project and other existing strong III-V material and device research program in UA. In addition to the significant research and technological accomplishments, this project provides graduate and undergraduate training in semiconductor material and device characterizations and development of new infrared materials.