Accession Number:

AD1062629

Title:

Radiation Effects in High k Gate Dielectrics on 111-V Semiconductor

Descriptive Note:

Technical Report,01 Apr 2010,31 Mar 2015

Corporate Author:

Yale University New Haven United States

Personal Author(s):

Report Date:

2018-10-01

Pagination or Media Count:

23.0

Abstract:

This research project was conducted to further the fundamental understanding of mechanisms of radiation effects in high-k gate dielectrics on 111-V semiconductors, such as GaAs, lnGaAs, lnAs, GaN, AIN, and GaAIN etc. with an emphasis on the the total ionization dose TIO effects on the generation mechanisms of electrically active defects in the gate dielectrics and at the interfaces that cause radiation-induced threshold voltage shift, degraded transconductance, increased leakage current, and decreased dielectric breakdown strength. The most significant results, including those related to TIO-induced defects in the gate stacks and their effects on device performance and reliability are reported.

Subject Categories:

  • Radioactivity, Radioactive Wastes and Fission Products
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE