Accession Number:

AD1058842

Title:

Two-Step Etch Process for Fabrication of III-V Nanolasers

Descriptive Note:

Technical Report,01 Oct 2015,30 Jun 2016

Corporate Author:

University of New Mexico Albuquerque Albuquerque United States

Personal Author(s):

• Balakrishnan, Ganesh

Report Date:

2017-02-27

Pagination or Media Count:

8.0

Abstract:

In this project, we sought to better optimize and understand the two-step etch process for creating GaN-based nanowires which are of interest for nanolasers and other applications. Additionally, we also sought to explore whether an analogous two-step etch approach, could be feasible and developed for traditional III-V semiconductors e.g. GaAs-based, leading to a top-down process for creating III-V nanowire lasers.

Descriptors:

• nanowires
• lasers
• etching
• fabrication
• GALLIUM NITRIDES
• semiconductors

Subject Categories:

• Printing and Graphic Arts
• Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE