Two-Step Etch Process for Fabrication of III-V Nanolasers
Technical Report,01 Oct 2015,30 Jun 2016
University of New Mexico Albuquerque Albuquerque United States
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In this project, we sought to better optimize and understand the two-step etch process for creating GaN-based nanowires which are of interest for nanolasers and other applications. Additionally, we also sought to explore whether an analogous two-step etch approach, could be feasible and developed for traditional III-V semiconductors e.g. GaAs-based, leading to a top-down process for creating III-V nanowire lasers.
- Printing and Graphic Arts
- Lasers and Masers