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Accession Number:
AD1058842
Title:
Two-Step Etch Process for Fabrication of III-V Nanolasers
Descriptive Note:
Technical Report,01 Oct 2015,30 Jun 2016
Corporate Author:
University of New Mexico Albuquerque Albuquerque United States
Report Date:
2017-02-27
Pagination or Media Count:
8.0
Abstract:
In this project, we sought to better optimize and understand the two-step etch process for creating GaN-based nanowires which are of interest for nanolasers and other applications. Additionally, we also sought to explore whether an analogous two-step etch approach, could be feasible and developed for traditional III-V semiconductors e.g. GaAs-based, leading to a top-down process for creating III-V nanowire lasers.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE