Electrically Injected 280 nm AlGaN Nanowire Lasers on Silicon
Technical Report,01 Sep 2015,31 Aug 2019
McGill University Montreal, QC Canada
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To date, the performance of deep UV optoelectronic devices has been limited by the presence of extremely large densities of threading dislocations, strong polarization field and the related quantum-confined Stark effect, and extremely poor p-type conduction of AlN. We have recently demonstrated that the afore-described challenges for achieving high performance deep UV optoelectronic devices can be fundamentally addressed by the emerging AlGaN nanowire structures.
- Electrooptical and Optoelectronic Devices