Accession Number:

AD1058786

Title:

Electrically Injected 280 nm AlGaN Nanowire Lasers on Silicon

Descriptive Note:

Technical Report,01 Sep 2015,31 Aug 2019

Corporate Author:

McGill University Montreal, QC Canada

Personal Author(s):

Report Date:

2017-02-28

Pagination or Media Count:

25.0

Abstract:

To date, the performance of deep UV optoelectronic devices has been limited by the presence of extremely large densities of threading dislocations, strong polarization field and the related quantum-confined Stark effect, and extremely poor p-type conduction of AlN. We have recently demonstrated that the afore-described challenges for achieving high performance deep UV optoelectronic devices can be fundamentally addressed by the emerging AlGaN nanowire structures.

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE