Accession Number:

AD1058701

Title:

Single-Spin Tunneling Force Microscopy for Characterization of Paramagnetic Defects in Electronic Materials

Descriptive Note:

[Technical Report, Final Report]

Corporate Author:

University of Utah

Personal Author(s):

• Williams, Clayton C
• Boehme, Christoph

Report Date:

2017-02-15

Pagination or Media Count:

29

Abstract:

This report details the objectives and research progress made during the last funded period toward the primary goal of this project to develop and demonstrate a single-spin magnetic resonance detection method with atomic scale spatial resolution. It contains a brief summary of progress made prior to the last funding period, after which a detailed summary of research performed during the funding period is presented. After initial attempts were made to demonstrate single spin detection using force detected tunneling between two single electron trap states in silicon dioxide one in probe tip, the other at the sample surface, a new material system silicon was chosen to further develop the single spin detection methodology. This report describes the research performed and progress achieved during the period toward the first of three longer term milestones. Progress during the past year includes a Demonstration of single electron tunneling between a metallic AFM tip and individual trap states in silicon dioxide at 77degrees Kelvin K, demonstrating that the electron tunneling barrier heights of individual defect states can be measured. b Analysis was performed of I-V measurements obtained from individual 31PPb pairs in silicon. This analysis supported moving this project from the amorphous silicon dioxide system to a crystalline silicon system at low temperature 5K in order to develop the single spin detection method in a step-by-step process. c Microfabrication of new sample holder with RF stripline and acquisition of new phosphorus doped sample. d Imaging and I-V spectroscopy of the new silicon samples and attempt to perform single-spin magnetic resonance measurements on individual P- Pb pairs in silicon. e Fabrication of PEDOT samplesrecalibration of static magnetic field. f Development of open-loop c-AFM imaging methodology. g Attempt to perform single-spin magnetic resonance measurements at ultra-low sub-200 fA currents.

Descriptors:

• magnetic resonance
• silicon compounds
• materials
• materials science
• digital data
• electron transitions
• frequency
• frequency shift
• resonance
• detection
• magnetic fields
• acquisition
• data set
• department of defense
• electron transfer
• engineering
• low temperature
• mathematics
• spin resonance
• telegraph signals

Subject Categories:

• Atomic and Molecular Physics and Spectroscopy
• Test Facilities, Equipment and Methods
• Miscellaneous Materials

Distribution Statement:

[A, Approved For Public Release]