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Purchase of LayTec EpiTT Real-Time Optical Monitoring Equipment for In-Situ Control of Type II Superlattice Growth in an MOCVD System

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Technical Report,01 Aug 2014,31 Jul 2015

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Georgia Tech Research Corporation Atlanta United States

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The awarded 58,000 in DURIP equipment funds per Contract No. W911NF-14-1-0426 was used to purchase and install a LayTec EpiTT 3W triple-wavelength in-situ emissivity corrected pyrometer on our existing Thomas Swan 6x2 Close-Coupled Showerhead metalorganic chemical vapor deposition MOCVD growth system which is used in the growth of III-As, P, Sb materials for a variety of DoD applications including the growth of InAs-GaSb and InAs-InAsSb type II superlattice T2SL structures and InP-InGaAs-InAlAs quantum-cascade lasers QCLs. The system is used by graduate students and postdocs who are working on this MOCVD reactor to grow a variety of device-related structures. The epitaxial growth of these multiple-period, ultra-thin layer device structures was optimized via this LayTec EpiTT system to maintain growth conditions during relatively long growth runs and precise growth rates, interface switching, and growth temperatures in order to obtain high-quality device structures. This additional in-situ, real-time growth monitoring tool, when added to our existing MOCVD system has provided accurate and reliable measurement of these critical growth parameters during the epitaxial growth as well asto provide information on the interface roughness and a complete archival record of the actual growth details during the run. With this LayTec system, we have reestablished growth process to achieve 60 pairs of InAs-InAsSb T2SL on GaSb substrate with highly uniform composition across the structure.

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  • Industrial Chemistry and Chemical Processing

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