Materials Science, Advanced Microscopy and Analytical Studies for Hg-based Infrared Detector Materials and Substrates
Technical Report,01 Aug 2013,30 Nov 2016
Arizona State University Tempe United States
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The long-term objective of this research was to contribute towards the development of higher quality mercury-based materials intended for infrared photo-detectors. The samples studied were grown by molecular beam epitaxy MBE on alternative composite substrates, such as Si or GaAs, with Cd,ZnSe,Te intermediary buffer layers, and the work was carried out in collaboration with colleagues in government laboratories who were responsible for the materials growth. Advanced transmission electron microscopy TEM and associated analytical methods were used for achieving an improved knowledge and understanding of the structural defects present in various HgCdTe-based materials and device structures. Cross sections of samples prepared by focused-ion-beam milling were used to study surface etch pits of different shapes and to identify the nature of the underlying threading defects via conventional Burgers circuit analysis with two-beam bright-field imaging conditions. Alternative strategies for defect reduction, including thermal-cycle annealing and mesa-structured materials, were also investigated. Etchants suitable for defect identification in HgCdSe films were briefly studied.
- Infrared Detection and Detectors
- Metallurgy and Metallography