Accession Number:
AD1058587
Title:
Band Structure and Band Offset Characterization of Semiconductor Heterojunctions
Descriptive Note:
Technical Report,15 Jun 2012,14 Jun 2015
Corporate Author:
Georgia State University Research Foundation Atlanta United States
Personal Author(s):
Report Date:
2017-01-05
Pagination or Media Count:
12.0
Abstract:
This report describe our work using p-type heterostructure devices as a platform to study band structure and band offset of heterojunctiondevice structures. The goal is to understandthe field-induced and temperature dependent changes in the valence band VB structure and relative properties used for designingand fabricating devices, such as absorption properties, carrier transports at the non-zero field condition, band parameters including the VBsplitting energies, effective masses, and the band alignment atinterfaces of heterojunctions, etc., by looking into the inter-valence-subband IVSB transitions caused photo-response spectroscopy. Theseideas were applied to HgCdTE , GaAsAlGaAs and type II superlattice type detectors. Hence this work provides critical information forheterostructure device development, not only for p-type Heiwip devices but also for p-n junction devices, HgCdTE detectors, type IIsuperlattice detectors and in general for future detector development efforts.
Descriptors:
Subject Categories:
- Solid State Physics