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Band Structure and Band Offset Characterization of Semiconductor Heterojunctions

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Technical Report,15 Jun 2012,14 Jun 2015

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Georgia State University Research Foundation Atlanta United States

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This report describe our work using p-type heterostructure devices as a platform to study band structure and band offset of heterojunctiondevice structures. The goal is to understandthe field-induced and temperature dependent changes in the valence band VB structure and relative properties used for designingand fabricating devices, such as absorption properties, carrier transports at the non-zero field condition, band parameters including the VBsplitting energies, effective masses, and the band alignment atinterfaces of heterojunctions, etc., by looking into the inter-valence-subband IVSB transitions caused photo-response spectroscopy. Theseideas were applied to HgCdTE , GaAsAlGaAs and type II superlattice type detectors. Hence this work provides critical information forheterostructure device development, not only for p-type Heiwip devices but also for p-n junction devices, HgCdTE detectors, type IIsuperlattice detectors and in general for future detector development efforts.

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  • Solid State Physics

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