Simulation of a High-Voltage Silicon Carbide (SiC) Power Diode under High-Action Pulsed Operation
US Army Research Laboratory Adelphi United States
Pagination or Media Count:
Future Army pulsed-power applications require semiconductor devices that will meet high-power, low-weight and volume, and fast-switching-speed constraints. This report details the pulse evaluation and corresponding modeling and simulation of 10-kV silicon carbide PiN diodes. The diode conducted a pulse current of 2.6 kA at a 1-ms pulse width with an instantaneous power dissipation of 26 kW. A model of a high-power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. Simulation of the on-state current and voltage across the diode closely matched measured data. Current density distribution through the device was analyzed and areas of localized high current density were identified.
- Electrical and Electronic Equipment