Accession Number:

AD1057732

Title:

High-Performance Sub-Lambda Silicon Plasmonic Modulator

Descriptive Note:

Technical Report,30 Sep 2014,29 Sep 2017

Corporate Author:

The George Washington University Washington United States

Personal Author(s):

Report Date:

2017-10-19

Pagination or Media Count:

20.0

Abstract:

The objective of this research program is to develop the first sub wavelength scale integrated electrooptic modulators for ultra low power communication links. In the proposed research, hybrid switching approaches utilizing positive synergies of photonics and plasmonics at the nanoscale will be investigated. By utilizing enhanced light latter interactions and conductive oxides as functional active materials, the performance frontier of switching devices will be pushed towards the THz regime while reducing their power consumption at the same time. These waveguide based electro optical transistors will blend seamlessly into silicon waveguiding platforms and will constitute the backbone of future photonic integrated circuits. Approach To approach to demonstrate the first sub long, high performing plasmonic based EOM is based on a waveguide integrated design that seamlessly blends a plasmonic EOM node into a Silicon on Insulator data routing platform. A gate stack comprised of the active material, Indium Tin Oxide ITO will be sandwiched between the top metal and the silicon waveguide core forming a deep subwavelength hybrid plasmon polariton mode. A thin gate oxide prevents electrical shorting through this Metal Oxide Semiconductor MOS capacitor.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE