Accession Number:

AD1053712

Title:

Protecting the Properties of Monolayer MoS2 on Silicon Based Substrates with an Atomically Thin Buffer

Descriptive Note:

Journal Article - Open Access

Corporate Author:

Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University Okinawa Japan

Report Date:

2016-02-12

Pagination or Media Count:

9.0

Abstract:

Semiconducting 2D materials, like transition metal dichalcogenides TMDs, have gained muchattention for their potential in opto-electronic devices, valleytronic schemes, and semi-conductingto metallic phase engineering. However, like graphene and other atomically thin materials, they losekey properties when placed on a substrate like silicon, including quenching of photoluminescence,distorted crystalline structure, and rough surface morphology. The ability to protect these properties ofmonolayer TMDs, such as molybdenum disulfide MoS2, on standard Si-based substrates, will enabletheir use in opto-electronic devices and scientific investigations. Here we show that an atomically thinbuffer layer of hexagonal-boron nitride hBN protects the range of key opto-electronic, structural, andmorphological properties of monolayer MoS2 on Si-based substrates. The hBN buffer restores sharpdiffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes overan order of magnitude enhancement in photoluminescence, compared to bare Si and SiO2 substrates.Our demonstration provides a way of integrating MoS2 and other 2D monolayers onto standard Sisubstrates,thus furthering their technological applications and scientific investigations.

Subject Categories:

  • Metallurgy and Metallography
  • Inorganic Chemistry
  • Physical Chemistry
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE