Accession Number:

AD1052597

Title:

Radiation Damage in Emerging Ga2O3 Devices for Solar-Blind UV Detection and High Power Electronics

Descriptive Note:

Conference Paper

Corporate Author:

University of Florida Gainesville United States

Report Date:

2018-03-12

Pagination or Media Count:

6.0

Abstract:

Large diameter bulk crystals of Ga2O3 are commercially available and the wide bandgap makes it promising for both power electronics and solar-blind UV detection. In some applications, it is desirable that the Ga2O3 have a significant degree of radiation hardness. There are now some initial reports of the effect of proton, electron, gamma ray and neutron irradiation of n-type beta-Ga2O3 rectifiers and UV photodetectors under conditions relevant to low earth orbit of satellites containing these types of devices. The carrier removal rates for proton, electron and neutron irradiation are found to comparable to those in GaN of similar doping levels for the same types of fluences. The main defect created in Ga2O3 by proton irradiation has been identified as a Ga vacancy with two hydrogens attached.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE