Nanowatt Level Wake-Up Receivers Using Co-Designed CMOS-MEMS Technologies
University of Virginia Charlottesville
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Event driven sensor nodes can spend the vast majority of their time in an asleep yet alert state that can dominate the total power budget when the node is heavily duty cycled. They thus require ultra-low power wakeup receivers that always stay on and that can detect wakeup events with high sensitivity. This paper presents a near-zero power, 8.3 nW wakeup receiver that combines the benefits of high quality factor aluminum nitride acoustic RF MEMS transformers with the complexity and sensitivity of 130nm CMOS chips including an envelope detector, comparator and low power clock to achieve -54dBm sensitivity at 457MHz.
- Electrical and Electronic Equipment
- Miscellaneous Detection and Detectors