Accession Number:

AD1052078

Title:

Thermal Simulation of a Silicon Carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT) in Continuous Switching Mode

Descriptive Note:

Technical Report,01 Sep 2016,28 Apr 2017

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD ADELPHI United States

Personal Author(s):

Report Date:

2018-05-16

Pagination or Media Count:

16.0

Abstract:

Thermal simulations were used to calculate temperatures in a silicon carbide SiC Insulated-Gate Bipolar Transistor IGBT,simulating device operation in a DC-DC power converter switching at a frequency of up to 15 kHz. Calculations also estimated the effect of solder layers on temperature in the device.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE