Thermal Simulation of a Silicon Carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT) in Continuous Switching Mode
Technical Report,01 Sep 2016,28 Apr 2017
ARMY RESEARCH LAB ADELPHI MD ADELPHI United States
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Thermal simulations were used to calculate temperatures in a silicon carbide SiC Insulated-Gate Bipolar Transistor IGBT,simulating device operation in a DC-DC power converter switching at a frequency of up to 15 kHz. Calculations also estimated the effect of solder layers on temperature in the device.
- Electrical and Electronic Equipment