Ballistic Deflection Transistors for THz Amplification
[Technical Report, Final Report]
University of Rochester
Pagination or Media Count:
The main objective of this collaborative project, between the University of Massachusetts Lowell and the University of Rochester, has been development of novel THz-bandwidth nanostructures based on room temperature, ballistic electron transport in 2-dimensional electron gas in III-V semiconductors. We have been working on amplifier structures using ballistic deflection transistors BDTs and initiated research on self-switching diodes SSDs that are unique planar nanostructures with diode-like characteristics.
- Electrical and Electronic Equipment