Accession Number:

AD1050680

Title:

Ballistic Deflection Transistors for THz Amplification

Descriptive Note:

[Technical Report, Final Report]

Corporate Author:

University of Rochester

Personal Author(s):

Report Date:

2016-05-09

Pagination or Media Count:

11

Abstract:

The main objective of this collaborative project, between the University of Massachusetts Lowell and the University of Rochester, has been development of novel THz-bandwidth nanostructures based on room temperature, ballistic electron transport in 2-dimensional electron gas in III-V semiconductors. We have been working on amplifier structures using ballistic deflection transistors BDTs and initiated research on self-switching diodes SSDs that are unique planar nanostructures with diode-like characteristics.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

[A, Approved For Public Release]