Assessment of Phosphorene Field-Effect Transistors
Technical Report,01 Jul 2014,30 Jun 2017
Lehigh University Bethlehem United States
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During the project period, phorsphorene field-effect transistors FETs were successfully passivated with atomic-layer deposited Al2O3 and proven to be stable for at least three months in room air. Meanwhile, the FET design evolved from long back-gated channels on conducting substrates that could be assessed only under direct-current conditions, to submicron top-gated channels that could operate at microwave frequencies under both small-signal and large-signal conditions. Further, CMOS-compatible submicron buried-gate structures were designed. However, lacking large-area phosphorene layers, the design was demonstrated only on monolayer MoS2 grown by chemical vapor deposition.
- Electrical and Electronic Equipment
- Fabrication Metallurgy