Accession Number:

AD1049912

Title:

Assessment of Phosphorene Field-Effect Transistors

Descriptive Note:

Technical Report,01 Jul 2014,30 Jun 2017

Corporate Author:

Lehigh University Bethlehem United States

Personal Author(s):

• Hwang,James C.

Report Date:

2018-01-28

Pagination or Media Count:

6.0

Abstract:

During the project period, phorsphorene field-effect transistors FETs were successfully passivated with atomic-layer deposited Al2O3 and proven to be stable for at least three months in room air. Meanwhile, the FET design evolved from long back-gated channels on conducting substrates that could be assessed only under direct-current conditions, to submicron top-gated channels that could operate at microwave frequencies under both small-signal and large-signal conditions. Further, CMOS-compatible submicron buried-gate structures were designed. However, lacking large-area phosphorene layers, the design was demonstrated only on monolayer MoS2 grown by chemical vapor deposition.

Descriptors:

• Field Effect Transistors
• dielectrics
• semiconductors
• thermal stability
• passivation (metallurgy)
• substrates
• layers
• chemical vapor deposition
• phosphorus
• fabrication

Subject Categories:

• Electrical and Electronic Equipment
• Fabrication Metallurgy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE