Accession Number:

AD1048837

Title:

Advanced Electronics

Descriptive Note:

Technical Report,01 Oct 2015,05 Apr 2017

Corporate Author:

Air Force Research Laboratory, Space Vehicles Directorate Kirtland AFB United States

Personal Author(s):

• Sharma,Ashwani

Report Date:

2017-07-21

Pagination or Media Count:

18.0

Abstract:

The Space Electronics Technology Branch RVSW is conducting a first time experimental and theoretical investigation focused on evaluating new physical phenomena in the quasi-quantum regime in which the hole mobility tends to exceed the electron mobility, and the electron reaches the group velocity in 2-D materials. These phenomena are due to a dramatic reduction of the holes effective mass resulting from combined effects of two dimensional confinement coupled with straintensile effects, and due to the electron wave function not being able to penetrate the barrier regions in 2D materials.

Descriptors:

• transport properties
• layers
• electron mobility
• tensile strain
• holes (electron deficiencies)
• silicon on insulator
• reactive ion etching
• lithography
• scanning electron microscopy
• charge carriers
• voltage
• photoconductivity
• thickness
• complementary metal oxide semiconductors
• velocity

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE