Modeling and Simulation for Particle Radiation Damage to Electronic and Opto-Electronic Devices
Technical Report,24 Sep 2014,11 Dec 2017
University of New Mexico Albuquerque, United States
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In this effort, we have undertaken fundamental studies on vertical transport in an antimonide-based semiconductor superlattice structure. For this purpose, we used theoretical expressions based on Hovel model to extract the minority carrier diffusion length of a unipolar nBp type-II superlattice T2SL mid-wave infrared detector. Combining these results with the lifetime via Time-Resolved Photoluminescence TRPL data, we were able to additionally determine the minority vertical mobility and diffusivity, providing a comprehensive picture of vertical transport characteristics of the excited carrier in the nBp T2SLdetectors. Finally, we performed dark current modeling and investigated the dominant dark current mechanisms at different temperatures. Our next step is to investigate the origin, types, and effects of radiation damage on this structure.
- Electrooptical and Optoelectronic Devices
- Electrical and Electronic Equipment