Thermal Simulations of a Silicon Carbide Super Gate Turn-Off (SGTO) with Pulsed Power Cycles
Technical Report,01 Apr 2010,01 Jun 2011
US Army Research Laboratory Adelphi United States
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We have performed computer simulations of thermal effects in a silicon carbide SiC super gate turn-off SGTO thyristor caused by short high-power pulses. We used two power pulses of different widths, repeated in multiple duty cycles, as inputs to our model. We used finite element analysis to calculate temperatures in and around the SiC dies during application of the power pulse and in the period between pulses.
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