Accession Number:

AD1042879

Title:

Innovative Ge Quantum Dot Functional Sensing and Metrology Devices

Descriptive Note:

Technical Report,29 May 2015,28 May 2017

Corporate Author:

National Chiao Tung University HSINCHU Taiwan

Personal Author(s):

Report Date:

2017-08-21

Pagination or Media Count:

23.0

Abstract:

This project successfully developed cutting-edge fabrication technologies for 1 the growth and autonomous migration mechanism of Germanium Ge quantum dots QDs within SiO2, Si3N4, and even Si substrate, 2 the realization of innovative Ge QDSi coupled-QD CQD photodetectors and Ge QD MOS phototransistors for visible to near IR photodetection, 3 the demonstration of direct bandgap photoluminescence from tensile-strained Ge QDs embedded within SiO2 system, and 4 self-organized Ge QD MOSFETs . Our designer Ge QDs embedded within Si-containing layers provide a great promise for Si-based light sources, photodetectors, and transducer amplifiers for Si-based photoncharge sensing, photonics, and even optical interconnections. Si-based photoncharge sensor, photonics, and optical interconnects have shown tremendous promises for replacing tight-packing, large latency electrical wires thanks to their inherent advantages of low energy, high data-rate transmission, and huge data capacity. It is therefore imperative to exploit the co-residency of optical interconnects systems and electronic circuits on a single-chip platform to provide high-performance functional-diversification CMOS Si-integrated circuits. Motivation to employ Ge QDs for Si-based photonics is strong in light of its pseudo-direct gap electronic structure and the compatibility with Si CMOS technology.

Subject Categories:

  • Quantum Theory and Relativity
  • Test Facilities, Equipment and Methods
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE