Accession Number:

AD1042234

Title:

Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed-Energy Capability

Descriptive Note:

Conference Paper

Corporate Author:

US Army Research Laboratory Adelphi United States

Report Date:

2017-03-01

Pagination or Media Count:

4.0

Abstract:

Silicon carbide avalanche breakdown diodes ABDs were fabricated with different P implant depths, drift layer thicknesses, and doping concentrations. ABDs from 4 different designs, having breakdown voltages near 1 kV, were pulse tested in an inductive load circuit at peak powers of over 110 kW. Total pulsed-energy dissipation was kept nearly the same among the ABDs for a defined pulse subinterval. Results of the pulsed-current tests are presented and conclusions are drawn from comparisons of the ABD clamping voltages about which design provides the highest pulsed-energy capability.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE