Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed-Energy Capability
US Army Research Laboratory Adelphi United States
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Silicon carbide avalanche breakdown diodes ABDs were fabricated with different P implant depths, drift layer thicknesses, and doping concentrations. ABDs from 4 different designs, having breakdown voltages near 1 kV, were pulse tested in an inductive load circuit at peak powers of over 110 kW. Total pulsed-energy dissipation was kept nearly the same among the ABDs for a defined pulse subinterval. Results of the pulsed-current tests are presented and conclusions are drawn from comparisons of the ABD clamping voltages about which design provides the highest pulsed-energy capability.
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