Accession Number:

AD1042016

Title:

A Comparative Analysis between GaN-Based Current and Voltage Mode Class-D and E PAs for Communications

Descriptive Note:

Conference Paper

Corporate Author:

Arizona State University Tempe, United States

Personal Author(s):

Report Date:

2017-03-01

Pagination or Media Count:

4.0

Abstract:

This work implements three discrete switched mode power amplifier PA topologies, namely inverse class- D CMCD, push-pull class-E, and inverse push pull class- E, in a GaN-on-Si process for medium power level 5-10W transmitters. The designs are analyzed and compared with respect to non-idealities such as bondwire effects and input signal duty cycle variation, for use with digitally modulated signals such as RFPWM. After comparing the three topologies, this work concludes that an inverse push-pull class-E architecture gives highest output power and efficiency for discrete GaN-based power amplifiers, and a voltage-mode class D PA gives an output power that is most responsive to varying input duty cycle. The presented inverse class-E PA achieves 61.5 drain efficiency at 37.7dBm output power in the 880MHz band.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE