A Comparative Analysis between GaN-Based Current and Voltage Mode Class-D and E PAs for Communications
Arizona State University Tempe, United States
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This work implements three discrete switched mode power amplifier PA topologies, namely inverse class- D CMCD, push-pull class-E, and inverse push pull class- E, in a GaN-on-Si process for medium power level 5-10W transmitters. The designs are analyzed and compared with respect to non-idealities such as bondwire effects and input signal duty cycle variation, for use with digitally modulated signals such as RFPWM. After comparing the three topologies, this work concludes that an inverse push-pull class-E architecture gives highest output power and efficiency for discrete GaN-based power amplifiers, and a voltage-mode class D PA gives an output power that is most responsive to varying input duty cycle. The presented inverse class-E PA achieves 61.5 drain efficiency at 37.7dBm output power in the 880MHz band.
- Electrical and Electronic Equipment