Accession Number:

AD1041973

Title:

Options for Hardening FinFETS with Flowable Oxide Between Fins

Descriptive Note:

Conference Paper

Corporate Author:

Naval Research Laboratory Washington United States

Personal Author(s):

• Hughes,Harold
• McMarr,Patrick
• Lee,Ji-Ung
• Alles,Michael
• Zhang,Enxia
• Ball,Dennis
• Doris,Bruce
• Southwick,Richard

Report Date:

2017-03-01

Pagination or Media Count:

2.0

Abstract:

A methodology using radiation-induced charge measurements by CV techniques on blanket oxides is shown to aid in the choice of process options for hardening FinFETs. Net positive charge in flowable oxides was reduced by 50 using a simple non-intrusive process change. This process translates into a 10x reduction in radiation induced offstate current for nFinFETs.

Descriptors:

• radiation hardening
• complementary metal oxide semiconductors

Subject Categories:

• Electrical and Electronic Equipment
• Electromagnetic Shielding
• Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE