Options for Hardening FinFETS with Flowable Oxide Between Fins
Naval Research Laboratory Washington United States
Pagination or Media Count:
A methodology using radiation-induced charge measurements by CV techniques on blanket oxides is shown to aid in the choice of process options for hardening FinFETs. Net positive charge in flowable oxides was reduced by 50 using a simple non-intrusive process change. This process translates into a 10x reduction in radiation induced offstate current for nFinFETs.
- Electrical and Electronic Equipment
- Electromagnetic Shielding
- Electricity and Magnetism