Recent Progress of B-Ga2O3 MOSFETs for Power Electronic Applications
Air Force Research Laboratory Wright Patterson Air Force Base United States
Pagination or Media Count:
We review AFRLs major device results in the fabrication of -Ga2O3 MOSFETs over the past 2 years. This includes 1 AFRLs standard fabrication process, 2improvement of current density, 3 improvement of contact resistance, 4 review of the critical field measurement and5 review of enhancement mode operation of a -Ga2O3finFET.
- Electrical and Electronic Equipment