Accession Number:

AD1041825

Title:

Recent Progress of B-Ga2O3 MOSFETs for Power Electronic Applications

Descriptive Note:

Conference Paper

Corporate Author:

Air Force Research Laboratory Wright Patterson Air Force Base United States

Personal Author(s):

• Moser,Neil A.
• Fitch,Robert C.
• Walker,Dennis E
• Green,Andrew J.
• Chabak,Kelson D.
• Heller,Eric
• McCandless,Jonathan P.
• Tetlak,Stephen E.
• Crespo,Antonio
• Leedy,Kevin D.
• Jessen,Gregg H.

Report Date:

2017-03-20

Pagination or Media Count:

4.0

Abstract:

We review AFRLs major device results in the fabrication of -Ga2O3 MOSFETs over the past 2 years. This includes 1 AFRLs standard fabrication process, 2improvement of current density, 3 improvement of contact resistance, 4 review of the critical field measurement and5 review of enhancement mode operation of a -Ga2O3finFET.

Descriptors:

• chemical vapor deposition
• molecular beam epitaxy
• fabrication
• simulations
• dry etching
• current density
• band gaps
• electric fields
• power electronics
• crystal growth

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE