Accession Number:

AD1041342

Title:

Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency

Descriptive Note:

Conference Paper

Corporate Author:

HRL Laboratories Malibu United States

Personal Author(s):

• Moon,Jeong-sun
• Kang,Jongchan
• Brown,Dave
• Grabar,Robert
• Wong,Danny
• Fung,Helen
• Chen,Peter
• Le,Dustin
• Tai,Hwa Y
• McGuire,Chuck

Report Date:

2017-03-01

Pagination or Media Count:

3.0

Abstract:

We report on a multi-octave 100 MHz 8GHz, linear nonuniform distributed amplifier NDPA in a MMIC architecture using scaled 120-nm short-gate length GaN HEMTs. The linear NDPAs were built with six sections in a nonuniform distributed amplifier approach ,where each cell consists of main and gm3 cells. The small signal gain was 10 dB over the band, with saturated C W output power of 35 dBm at Vdd 17 V. The PAE improved by 7 10 within the band compared to the previous NDPA with 150-nm gate-length GaN FETs .Based on two-tone testing, the linear NDPA showed improved OIP3 of 50 dBm, compared to OIP3 of 42 dBm for the NDPA without linearization. Under QPSK LTE waveform, the ACPR1improved by 10 dBc at average output power of 23 dBm, without digital pre-distortion.

Descriptors:

• distributed amplifiers
• frequency bands
• low noise amplifiers
• carrier frequencies
• dynamic range
• gain
• high dynamic range
• distortion
• high voltage
• capacitance
• phase shift
• impedance
• resistance
• gallium nitrides

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE