Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency
HRL Laboratories Malibu United States
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We report on a multi-octave 100 MHz 8GHz, linear nonuniform distributed amplifier NDPA in a MMIC architecture using scaled 120-nm short-gate length GaN HEMTs. The linear NDPAs were built with six sections in a nonuniform distributed amplifier approach ,where each cell consists of main and gm3 cells. The small signal gain was 10 dB over the band, with saturated C W output power of 35 dBm at Vdd 17 V. The PAE improved by 7 10 within the band compared to the previous NDPA with 150-nm gate-length GaN FETs .Based on two-tone testing, the linear NDPA showed improved OIP3 of 50 dBm, compared to OIP3 of 42 dBm for the NDPA without linearization. Under QPSK LTE waveform, the ACPR1improved by 10 dBc at average output power of 23 dBm, without digital pre-distortion.
- Electrical and Electronic Equipment