Accession Number:

AD1040281

Title:

Greens Function-Based Defect Identification in InAs-InA1-xSbx Strained Layer Superlattices (Postprint)

Descriptive Note:

Journal Article

Corporate Author:

SRI International Menlo Park United States

Personal Author(s):

Report Date:

2017-06-15

Pagination or Media Count:

8.0

Abstract:

We have extended the recently developed approach that employs first-principles Hamiltonian, tight-binding Hamiltonian, and Greens function methods to study native point defect states in InAsInAs0.7Sb0.3 strained layer superlattices SLS latticed matched to GaSb. Our calculations predict a defect level at 250 meV below the GaSb valance band edge, in agreement with values deduced recently from lifetime measurements and analysis Aytac et al. Phys. Rev. Appl., 5, 054016 2016. In addition, we identify the defect level to be arising from an In-vacancy in the InAsSb region of the superlattice. The formation energy calculations further indicate that In-vacancies are easier to form in both regions of the superlattice than in bulk InAs or in InAsSb alloy. Our results suggest that In-vacancy is the most damaging native defect that limits lifetimes InAs InAsInAs0.7Sb0.3

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE