Accession Number:

AD1040278

Title:

MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES

Descriptive Note:

Technical Report,13 May 2015,13 May 2016

Corporate Author:

University of Colorado Boulder United States

Personal Author(s):

Report Date:

2017-10-16

Pagination or Media Count:

28.0

Abstract:

The objective of this project is to experimentally study the transient non-diffusive phonon transport in gallium nitride GaN based high electron mobility transistor HEMT devices. Using the ultrafast pump-probe thermoreflectance, we found that the measured thermal conductivity of the GaN substrate depends on the heating frequency and the metal thin film thickness. This novel phenomenon observed suggest that phonon transport in GaN would depend on both the structural and operating frequency.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE