Accession Number:

AD1040062

Title:

Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs

Descriptive Note:

Technical Report,01 Oct 2016,30 Sep 2017

Corporate Author:

US Army Research Laboratory Adelphi United States

Personal Author(s):

Report Date:

2017-10-01

Pagination or Media Count:

26.0

Abstract:

The US Army Research Laboratory is exploring devices and circuits for radio frequency communications, networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high-power monolithic microwave integrated circuit amplifiers are extremely important in any system that must operate reliably and efficiently in continually crowded spectrums, with multiple purposes for communications, networking, and radar. This report describes the design of a broadband Class AB power amplifier using Raytheons high-frequency, efficient, gallium nitride on 4-mil silicon carbide process. While this design was not part of the initial wafer fabrication for the original effort, it could be finalized and fabricated at a future date.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE