Accession Number:

AD1038718

Title:

Broadband 0.25-um Gallium Nitride (GaN) Power Amplifier Designs

Descriptive Note:

Technical Report,09 Feb 2017,28 Jun 2017

Corporate Author:

US Army Research Laboratory Aberdeen Proving Ground United States

Personal Author(s):

• Penn, John E

Report Date:

2017-08-14

Pagination or Media Count:

52.0

Abstract:

The US Army Research Laboratory is exploring devices and circuits for RF communications, networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high-power monolithic microwave integrated circuit amplifiers are extremely important in any communication system that must operate reliably and efficiently in continually crowded spectrums, with multiple purposes for communications, networking, and radar. This report describes the design of a broadband class AB power amplifier using Qorvos 0.25-m high-power efficient gallium nitride on a 4-mil silicon carbide process. This design was one of several submitted to a US Air Force Research Laboratory sponsored wafer fabrication.

Descriptors:

• microwaves
• amplifiers
• circuits
• networks
• detectors
• department of defense
• radar
• broadband
• wafers
• integrated circuits
• military research

Subject Categories:

• Active and Passive Radar Detection and Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE