DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
AD1038137
Title:
ASSESSMENT OF GALLIUM OXIDE TECHNOLOGY
Descriptive Note:
Technical Report,01 Sep 2016,01 May 2017
Corporate Author:
Air Force Research Laboratory, Sensors Directorate WPAFB United States
Report Date:
2017-08-01
Pagination or Media Count:
103.0
Abstract:
Gallium oxide Ga2O3 is a member of the ultra-wide bandgap semiconductor family. Because of its wide bandgap, it is expected to find applications in ultraviolet UV-transparent conductive films, UV detectors, and high power electronics and possibly in microwave switching and amplification. Power electronics applications range from on-chip power converters to high voltage rectifiers for electric power transmission lines. High-voltage switching transistors used in these applications are required to have small ON resistance while providing very high blocking voltages in the OFF state. Although there are existing kV-range power switches today, the Ga2O3 devices are expected to increase this capability to the 100s of kV to MV range. This report summarizes the current status of the Ga2O3 technology based on published results on theoretical electronic structure, materials growth, and device fabrication.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE