Accession Number:



GeSn/Si Avalanche Photodetectors on Si substrates

Descriptive Note:

Technical Report,24 Jun 2013,23 Jun 2016

Corporate Author:

University of Arkansas Fayetteville United States

Personal Author(s):

Report Date:


Pagination or Media Count:



In this project, firstly, the material growth of GeSn by chemical vapor deposition CVD system has been investigated. The material growth mechanism was in-depth studied secondly, the material and optical characterizations have been conducted, including SEM, TEM, XRD, Raman, PL and ellipsometry spectroscopy. The results indicated that the device level material quality was achieved thirdly, the GeSn samples were fabricated into LEDs and photo detectors, whose operating wavelength coverd from 1700 to 2600 nm. Particularly, the responsivity of GeSn photoconductor was higher than that of III-V photo detector, and the D of GeSn photodiode was only one order of magnitude lower than that of extend-InGaAs detector, indicating the promising future applications of these type of photodetectors. Based on the characterization results, the GeSn photo detector as a potential candidate for low-cost uncooled multi-color infrared focal-plane-array was proposed. FPA application

Subject Categories:

  • Industrial Chemistry and Chemical Processing

Distribution Statement: