Impact of Reduced Graphene Oxide on MoS2 Grown by Sulfurization of Sputtered MoO3 and Mo Precursor Films (Postprint)
University of Dayton Research Institute Dayton United States
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Monolayer molybdenum disulfide MoS2, a two dimensional semiconducting dichalcogenide material with a bandgap of 1.81.9 eV, has demonstrated promise for future use in field effect transistors and optoelectronics. Various approaches have been used for MoS2 processing, the most common being chemical vapor deposition. During chemical vapor deposition, precursors such as Mo, MoO3, and MoCl5 have been used to form a vapor reaction with sulfur, resulting in thin films of MoS2. Currently, MoO3 ribbons and powder, and MoCl5 powder have been used. However, the use of ribbons and powder makes it difficult to grow large area-continuous films. Sputtering of Mo is an approach that has demonstrated continuous MoS2 film growth. In this paper, the authors compare the structural properties of MoS2 grown by sulfurization of pulse vapor deposited MoO3 and Mo precursor films. In addition, they have studied the effects that reduced graphene oxide rGO has on MoS2 structure. Reports show that rGO increases MoS2 grain growth during powder vaporization.
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