Characterization of Carrier Transport Properties in Strained Crystalline Si Wall-Like Structures as a Function of Scaling into the Quasi-Quantum Regime
Technical Report,02 Dec 2009,01 May 2017
University of Missouri Columbia United States
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This research focused on transport characteristics of electrons and holes through narrow constricted crystalline Si wall-like long channels that were surrounded by a thermally grown SiO2 layer. The strained buffering depth inside the Si region due to SiSiO2interfacial lattice mismatch is where scattering is seen to enhance some modes of the carrier-lattice interaction, while suppressing others, thereby changing the relative value of the carriers effective masses of both electrons and holes, as compared to bulk Si. Importantly, as a result of the existence of fixed oxide charges in the thermally grown SiO2 layer and the SiSiO2 interface, the effective Si cross-sectional wall widths were considerably narrower than the actual physical widths, due to the formation of depletion regions from both sides. The physical height of the crystalline-Si structures was 1500 nm, and the widths were incrementally scaled down from 200 nm to 20 nm. These nanostructures were configured into a metal-semiconductor-metal device configuration that was isolated from the substrate region. In the narrowest wall devices, a considerable increase in conductivity was observed as a result of higher carrier mobilities due to lateral constriction and strain.
- Solid State Physics