Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers
Journal Article - Open Access
MASSACHUSETTS INST OF TECH LEXINGTON LEXINGTON United States
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A generalized theoretical formalism is derived that optimizes the doping profile of semiconductor diode lasers and amplifiers for maximum power conversion efficiency by balancing resistive and free-carrier absorption losses. The doping profile is shown to be the same function of optical mode profile, free-carrier absorption cross-section, and carrier mobility, independent of the specific model used for efficiency. The magnitude of the doping is dictated by the chosen efficiency model and the device design and operating conditions. The derived formalism can be applied to any particular model of diode emitter efficiency and expressed entirely in terms of measurable parameters. In addition, as a consequence of this analysis, a figure of merit is introduced that quantifies the ability of a waveguide to perform as a high efficiency laser or amplifier.
- Quantum Theory and Relativity
- Lasers and Masers