Radiation Hard and Self Healing Substrate Agnostic Nanocrystalline ZnO Thin Film Electronics
Technical Report,26 Sep 2011,25 Sep 2015
PENNSYLVANIA STATE UNIV STATE COLLEGE UNIVERSITY PARK United States
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Radiation exposure effects for ZnO thin film transistors TFTs with active layers deposited by plasma enhanced atomic layer deposition and pulsed laser deposition are studied for gamma ray doses up to 100 Mrad. Radiation exposure related TFT changes, either with or without electrical bias during irradiation, are primarily a negative threshold voltage shift and a smaller threshold voltage shift. Field effect mobility remains nearly unchanged. Radiation induced changes are nearly completely removed by annealing at 200 C for 1 minute and some recovery is seen even at room temperature. To the best of our knowledge, these are the most radiation-hard thin film transistors reported to date.
- Electrical and Electronic Equipment
- Electromagnetic Shielding