Accession Number:

AD1031804

Title:

Flexible 2D RF Nanoelectronics based on Layered Semiconductor Transistor (NBIT III)

Descriptive Note:

Technical Report,14 Aug 2013,13 Aug 2016

Corporate Author:

UNIVERSITY OF CALIFORNIA BERKELEY BERKELEY United States

Report Date:

2016-11-11

Pagination or Media Count:

33.0

Abstract:

Experimental and computational studies in multidisciplinary fields of electrical, mechanical engineering, and materials science were conducted to achieve the following major goals of this project Development of laser annealing for improving contact quality to achieve high-performance devices on a flexible platform Modification of optical and electrical properties of 2D materials with laser assisted and site selective doping and alloying Development of plasmonic laser welding process and solution based embedded polyimide PI structure for making highly robust flexiblewearable devices Stress-strain analysis for optimizing the structure design e.g. radius of curvature, thickness of the structure, etc. Large-area and highly crystalline CVD-grown 2D films Optimization of device designs to achieve flexible biosensors with 2D materials for highly sensitive and selective biological detection Through the project, aforementioned results demonstrate that pulsed laser process is an attractive technology for realizing high performance flexible MoS2 TFTs in analogdigital integrated circuits they are published in peer-reviewed journals more than 17 papers and are presented at conferences more than 10 times. In addition, we are continuing our research on flexiblewearable electronics and their applications, especially for sensors.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE