Accession Number:

AD1028849

Title:

Analysis and Control of Carrier Transport in Unipolar Barrier Mid-Infrared (IR) Detectors

Descriptive Note:

Technical Report,01 Oct 2015,30 Dec 2016

Corporate Author:

University of Rochester Rochester United States

Personal Author(s):

• Wicks,Gary W.

Report Date:

2017-01-03

Pagination or Media Count:

16.0

Abstract:

Molecular Beam Epitaxy MBE growth quality is shown to have significant effects on the carrier transport, e.g., dark current of unipolar barrier infrared detectors constructed of InAs-based materials. MBE growth temperature affects the quality of InAs materials, as assessed by measured defects concentration, surface roughness, and photoluminescence. InAs material quality correlated with dark current of InAsnBn detectors.

Descriptors:

• infrared detectors
• molecular beam epitaxy
• electronics
• radiation effects
• semiconductors
• theory
• surface roughness
• photoluminescence
• temperature

Subject Categories:

• Crystallography
• Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE