Analysis and Control of Carrier Transport in Unipolar Barrier Mid-Infrared (IR) Detectors
Technical Report,01 Oct 2015,30 Dec 2016
University of Rochester Rochester United States
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Molecular Beam Epitaxy MBE growth quality is shown to have significant effects on the carrier transport, e.g., dark current of unipolar barrier infrared detectors constructed of InAs-based materials. MBE growth temperature affects the quality of InAs materials, as assessed by measured defects concentration, surface roughness, and photoluminescence. InAs material quality correlated with dark current of InAsnBn detectors.
- Infrared Detection and Detectors