Accession Number:

AD1028562

Title:

2016 International Workshop on Nitride Semiconductors (IWN 2016)

Descriptive Note:

Technical Report,15 Aug 2016,14 Feb 2017

Corporate Author:

Materials Research Society Warrendale United States

Personal Author(s):

• Palacios ,Tomas

Report Date:

2017-01-01

Pagination or Media Count:

39.0

Abstract:

Nitride-based semiconductors are among the most promising materials for the next generation of electronic and optoelectronic applications. Through this project, ONR supported the organization of the 2016 International Workshop on Nitride Semiconductors IWN. Thanks to the ONR funding, we were able to reduce the registration cost of 26 graduate students who attended this Conference. This support allowed the student participants to gain exposure to the new concepts of gallium nitride materials and devices.

Descriptors:

• power electronics
• solid state physics
• semiconductors
• GALLIUM NITRIDES

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE