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Diode Laser Pumped Alkali Vapor Lasers with Exciplex-Assisted Absorption

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Technical Report,15 Aug 2007,14 Feb 2013

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Emory University Atalnta United States

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Gain and lasing for optically pumped metastable Ne, Ar , Kr and Xe was demonstrated. Three-level lasing schemes were used, with He as the energy transfer agent that established the population inversion. The excitation source used in these initial studies was a pulsed optical parametric oscillator. The lasers operated at 703.2 Ne, 9 12.5 Ar, 893.1 Kr and 980.2 nm Xe. Peak powers as high as 27kW cm2 were observed forAr. Lasing of Ar was also demonstrated using a 7.5W CW diode laser supplied by the group at UCF. Techniques were developed for spectral narrowing of semiconductor lasers by volume Bragg gratings VBGs recorded in photo-thermo-refractivePTR glass. This technology provides efficient excitation by radiation of low pressure Rb and Cs vapors from ground states and by low pressure Ar and Kr from metastable states. Exposed and developed PTR glass with an absorption of0.0006cm at 780 run was demonstrated. Spectral widths were below 20 pm. The technology transferred to OptiGrate Corporation which supplies high power pumping system to AFRL.

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  • Lasers and Masers

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